plastic - encapsulate m osfets fe a tures 8810 - channel mosfet tssop-8 page:p4 - p 1 guangdong hot tech industrial co ., ltd. g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view absolute maximum ratings t a =25c unless otherwise noted v ds (v) = 20v i d = 6a (v gs = 4.5v) r ds(on) < 22m ? (v gs = 4.5v) r ds(on) < 30m ? (v gs = 2.5v) esd rating: 2000v hbm d1 s1 g2 d2 s2 symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c v v 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 -55 to 150 i d 6 dual n-channel enhancement mode mosfet
plastic - encapsulate m osfets electrical characteristics (ta=25c, unless otherwise noted) 8810 page:p4 - p 2 guangdong hot tech industrial co ., ltd. symbol min typ max units bv dss 20 v 1 15 a v gs(th) 0.5 0.6 1 v i d(on) 30 a m ? g fs 29 s v sd i s 2.5 a c iss 1160 pf c oss 187 pf c rss 146 pf r g 1.5 ? q g 16 nc q gs 0.8 nc q gd 3.8 nc t d(on) 6.2 ns t r 12.7 ns t d(off) 51.7 ns t f 16 ns t rr 17.7 ns q rr 6.7 nc body diode reverse recovery time body diode reverse recovery charge i f =7a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =6a reverse transfer capacitance i f =7a, di/dt=100a/ s static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =16v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =12v r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =2.5v, i d =5.5a i s =1.5a,v gs =0v v ds =5v, i d =6a turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.35 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =7a gate source charge turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge maximum body-diode continuous current input capacitance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. 22 20 30 28 v 1.2
plastic - encapsulate m osfets typical characteristics page:p4 - p 3 guangdong hot tech industrial co ., ltd. 8810 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1v v gs =1.5v v gs =2v 8v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =6.5a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =6.5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c
plastic - encapsulate m osfets page:p4 - p 4 guangdong hot tech industrial co ., ltd. typical characteristics 8810 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =7a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t o n t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =83c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c 10 s
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